advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 35v simple drive requirement r ds(on) 10m fast switching characteristic i d 52a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c thermal resistance junction-case max. 2.8 /w rthj-a thermal resistance junction-ambient max. 110 /w data & specifications subject to change without notice 200703061-1/4 total power dissipation thermal data parameter linear derating factor 0.35 storage temperature range operating junction temperature range continuous drain current 33 pulsed drain current 1 200 gate-source voltage 20 continuous drain current 52 parameter rating drain-source voltage 35 -55 to 150 -55 to 150 ap4420gh/j pb free plating product 45 g d s to-252(h) the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (AP4420GJ) are available for low-profile applications. g d s to-251(j) g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 35 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.01 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 10 m v gs =4.5v, i d =15a - - 24 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 28 - s i dss drain-source leakage current (t j =25 o c) v ds =35v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =28v, v gs =0v - - 25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =30a - 16 26 nc q gs gate-source charge v ds =25v - 6 - nc q gd gate-drain ("miller") charge v gs =4.5v - 9.5 - nc t d(on) turn-on delay time 2 v ds =15v - 9 - ns t r rise time i d =30a - 74 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 22.5 - ns t f fall time r d =0.5 - 7.7 - ns c iss input capacitance v gs =0v - 1520 2430 pf c oss output capacitance v ds =25v - 320 - pf c rss reverse transfer capacitance f=1.0mhz - 230 - pf r g gate resistance f=1.0mhz - 1.8 2.7 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =20a, v gs =0 v , - 27 - ns q rr reverse recovery charge di/dt=100a/s - 20 - nc drain-source avalanche ratings symbol parameter test conditions min. typ. max. units e as drain-source avalanche energy 3 i d =15a, v dd =35v, l=1mh - - 113 mj i as drain-source avalanche current - 15 - a notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. 3.single pulse test. 2/4 ap4420gh/j
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. reverse diode drain current 3/4 ap4420gh/j 0 20 40 60 80 100 120 0.0 2.0 4.0 6.0 8.0 10.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7 .0v 5.0v 4.5 v v g =4.0v 0 20 40 60 80 100 120 0.0 2.0 4.0 6.0 8.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0 v 5.0v 4.5 v v g = 4.0 v 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 5 10 15 20 25 30 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 10.0 20.0 30.0 40.0 50.0 0 10203040 i d , drain current (a) r ds(on) (m ? ) v gs =10v 0 20 40 60 80 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =15a t c =25 o c v gs =4.5v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4/4 ap4420gh/j 0 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 4 8 12 16 0 5 10 15 20 25 30 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =15v v ds =20v v ds =25v 10 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge 0 20 40 60 80 100 120 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
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